1200 V, 45 mohm Normally-On SiC JFET

    Discontinued >

    Possible replacement: UJ3N120035X

    Key Features

    • Low on-resistance (RDS(on)max) of 0.045 ohm
    • Voltage controlled
    • Maximum operating temperature: 175 °C
    • Extremely fast switching not dependent on temperature
    • Low gate charge
    • Low intrinsic capacitance

    Qorvo's UJN1205K is a 1200 V, 45 mohm RDS(on) high-performance SiC normally-on JFET transistor. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

    Typical Applications

      • Over current protection circuits
      • DC-AC inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 1,200
    RDS(on) Typ @ 25C(mohm) 45
    ID Max(A) 38
    Generation Gen 1
    Tj Max(°C) 175
    Automotive Qualification No
    Package Type TO-247-3L
    RoHS Yes
    Lead Free No
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99