Qorvo's TGA2575-TS is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick, GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications
Lead-free and RoHS compliant.
|Package Type||Die on CuMoCu|
|Package(mm)||5.31 x 8.92 x 0.49|