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    SiC JFETs

    Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS(on)) starting at just 4 mΩ. Additionally, low gate charge (QG) allows for reduced conduction and switching losses. These products are ideal for circuit protection applications.

    Key Features

    • 650 / 900 / 1200 / 1700 V device options
    • Low on-resistance: RDS(on) of 25 mohms
    • Current limiting: rapid current decrease due to self-heating, limiting I2t
    • Normally-on JFETs: VG(th) invariant with temperature
    • RoHS compliant

    Typical Applications

    • Overcurrent protection circuits
    • DC-AC inverters
    • Switched-mode power supplies
    • Power factor correction modules
    • Motor drives
    • Induction heating

    Contact Qorvo Power for quotes, samples and more.

     Visit the SiC JFET forum and join the conversation.

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