Qorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Excellent IFSM (surge) rating of any supplier
High thermal resistance
Ag sintered bonding
Best in class VF*Qc figure of merit
High current ratings: 25 A / 1700 V, 100 A / 1200 V, 200 A / 650 V