Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET, enabling standard gate drive SiC device operation. The majority of these devices are AEC-Q101 qualified.
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