Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS(on)) as low as 25 mohms. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications.
650 / 900 / 1200 / 1700 V device options
Low on-resistance: RDS(on) of 25 mohms
Current limiting: rapid current decrease due to self-heating, limiting I2t
Normally-on JFETs: VG(th) invariant with temperature