SiC JFETs have long been considered ideal devices for solid-state circuit breaker and solid-state power controller applications, given their ability to have low on-state resistance at high voltage ratings, without compromising their ability to limit current when needed. In this white paper, we examine the use of normally-off SiC FETs in a dual-gate configuration to simplify the development of high current DC and AC circuit breakers.
Control theory is one of the many aspects of electronic theory required for power electronic design. With the ever increasing popularity of digital control, it is important to have a good understanding of the basics of digital control. Many textbooks have been written about system modeling and control theory, but what can be difficult to find is a clear explanation of how to take an existing continuous-time model and convert it to something that can actually be programmed into a microcontroller. This is the subject of this application note. As an example, a continuous-time transfer function is implemented in C code, with the essential mathematical theory highlighted along the way.
Power conversion is a common element in almost every electronic device, implemented in a variety of topologies. This white paper provides the context behind the development of new semiconductor technologies with examples given of innovative parts that are placed to provide the right mix of features for current and emerging power conversion applications.
Wide band-gap semiconductors as high-frequency switches are enablers for better efficiency in power conversion. One example, the silicon carbide switch can be implemented as a SiC MOSFET or in a cascode configuration as a SiC FET. This white paper traces the origins and evolution of the SiC FET to its latest generation and compares its performance with alternative technologies.
Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great performance for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now.
Wide bandgap semiconductors are finding applications in all types of power conversion including in electric vehicles. This white paper explains how the latest-generation SiC FETs are ideally suited to new inverter designs with lower losses than IGBTs and proven robustness against short circuits, even at high temperatures and under repetitive stress.
The benefits of silicon carbide (SiC) devices for use in power electronics are driven by fundamental material benefits of high breakdown field and thermal conductivity, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point.