High Performance SiC FETs, Modules, JFETs and Diodes
Qorvo’s cutting-edge portfolio of silicon carbide (SiC) FETs, power modules, JFETs, and Schottky diodes sets the standard for high-voltage SiC efficiency. The unique cascode JFET configuration utilized in our SiC FETs and modules delivers higher switching frequency with low RDS(on) and switching losses, all with the benefit of familiar, industry-standard packaging. The ultra-low on-resistance exhibited by our stand-alone, normally-on JFETs make them an excellent fit in circuit protection applications. Finally, our SiC Merged-PiN-Schottky (MPS) diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Quickly evaluate and identify the optimal SiC device for your power topology