650 V, 80 mohm Normally-On SiC JFET

    Key Features

    • On-resistance (RDS(on)): 80 mohm (typ)
    • Voltage controlled
    • Maximum operating temperature: 175 °C
    • Extremely fast switching not dependent on temperature
    • Low gate charge
    • Low intrinsic capacitance

    Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

    Typical Applications

      • Over current protection circuits
      • DC-AC inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 650
    RDS(on) Typ @ 25C(mohm) 80
    ID Max(A) 32
    Generation Gen 3
    Tj Max(°C) 175
    Automotive Qualification Yes
    Package Type TO-247-3L
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99