DC - 20 GHz, 800 um Discrete GaAs pHEMT Die

    Key Features

    • Frequency Range: DC - 20 GHz
    • Typical Output Power P1dB: 29.5 dBm
    • Typical Gain at 12 GHz: 11.5 dB
    • Typical PAE at 12 GHz: 56%
    • Typical NF at 12 GHz: 1 dB
    • No Vias
    • Technology: 0.25 um GaAs pHEMT
    • Chip Dimensions: 0.41 x 0.54 x 0.10 mm

    Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2080D typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the QPD2080D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

    Lead-free and RoHS compliant.

    Typical Applications

      • Communications
      • Radar
      • Point-to-Point Radio
      • Satellite Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 20,000
    Gain(dB) 11.5
    OP1dB(dBm) 29.5
    Psat(dBm) 29.5
    NF(dB) 1
    PAE(%) 56
    Vd(V) 8
    Idq(mA) 130
    Package Type Die
    Package(mm) 0.41 x 0.54 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99